Topological Magnetic Phases and Berry Curvature Effects in Engineered Graphene Systems

Abstract

In this research paper, we investigate the emergence of topological magnetic phases and Berry curvature effects in engineered graphene systems. Pristine graphene, although exhibiting remarkable electronic properties such as high carrier mobility and linear Dirac dispersion, is intrinsically nonmagnetic and topologically trivial. To overcome this limitation, we explore the influence of defects, adatom deposition, proximity coupling to magnetic substrates, strain engineering, and enhanced spin–orbit coupling (SOC) on the electronic and magnetic properties of graphene. Using a combination of tight-binding Hamiltonians, density functional theory (DFT), and Wannier-based Berry curvature calculations, we systematically analyze the band structure evolution, magnetic moment formation, and topological invariants under various engineered conditions. Our results show that exchange interaction and SOC induce spin-split Dirac bands and open sizable band gaps, while Berry curvature becomes strongly localized near the K and K′ valleys. These effects lead to quantized anomalous Hall conductivity and valley-polarized transport, signifying the realization of Chern insulating phases. Furthermore, strain and moiré superlattices are found to enhance Berry curvature asymmetry, providing additional tunability of topological properties. The study establishes parameter regimes for stable topological magnetism and highlights engineered graphene as a promising platform for spintronic, valleytronic, and quantum computing applications.